WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET
ພາບລວມຜະລິດຕະພັນ WINSOK MOSFET
ແຮງດັນຂອງ WSD80100DN56 MOSFET ແມ່ນ 80V, ປະຈຸບັນແມ່ນ 100A, ຄວາມຕ້ານທານແມ່ນ 6.1mΩ, ຊ່ອງທາງແມ່ນ N-channel, ແລະຊຸດແມ່ນ DFN5X6-8.
ພື້ນທີ່ຄໍາຮ້ອງສະຫມັກ WINSOK MOSFET
Drones MOSFET, motors MOSFET, automotive electronics MOSFET, MOSFET ເຄື່ອງໃຊ້ທີ່ສໍາຄັນ.
WINSOK MOSFET ກົງກັບຕົວເລກອຸປະກອນຍີ່ຫໍ້ອື່ນໆ
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
ຕົວກໍານົດການ MOSFET
| ສັນຍາລັກ | ພາລາມິເຕີ | ຄະແນນ | ໜ່ວຍ |
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source ແຮງດັນ | ±20 | V |
| TJ | ອຸນຫະພູມ Junction ສູງສຸດ | 150 | °C |
| ID | ຊ່ວງອຸນຫະພູມການເກັບຮັກສາ | -55 ຫາ 150 | °C |
| ID | ກະແສໄຟຟ້າຢ່າງຕໍ່ເນື່ອງ, VGS=10V,TC=25°C | 100 | A |
| ກະແສໄຟຟ້າຢ່າງຕໍ່ເນື່ອງ, VGS=10V,TC=100°C | 80 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 380 | A |
| PD | ການກະຈາຍພະລັງງານສູງສຸດ, TC=25°C | 200 | W |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C |
| EAS | ພະລັງງານ Avalanche, ກໍາມະຈອນດ່ຽວ, L=0.5mH | 800 | mJ |
| ສັນຍາລັກ | ພາລາມິເຕີ | ເງື່ອນໄຂ | ຕ່ຳສຸດ | ພິມ. | ສູງສຸດ. | ໜ່ວຍ |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSSຄ່າສໍາປະສິດອຸນຫະພູມ | ອ້າງເຖິງ 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ເປີດ) | Static Drain-Source On-Resistance2 | VGS=10V, ID=40A | --- | 6.1 | 8.5 | mΩ |
| VGS(ທີ) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(ທີ) | VGS(ທີ)ຄ່າສໍາປະສິດອຸນຫະພູມ | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , ວGS=0V , ທJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , ວGS=0V , ທJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=20A | 80 | --- | --- | S |
| Qg | ຄ່າຜ່ານປະຕູທັງໝົດ (10V) | VDS=30V , VGS=10V, ID=30A | --- | 125 | --- | nC |
| Qgs | ຄ່າບໍລິການ Gate-Source | --- | 24 | --- | ||
| Qgd | ຄ່າບໍລິການ Gate-Drain | --- | 30 | --- | ||
| Td(ເປີດ) | ເປີດເວລາຊັກຊ້າ | VDD=30V , VGS=10V , RG=2.5Ω, ID=2A ,RL=15Ω. | --- | 20 | --- | ns |
| Tr | ເວລາເພີ່ມຂຶ້ນ | --- | 19 | --- | ||
| Td(ປິດ) | ປິດ-ປິດ ເວລາຊັກຊ້າ | --- | 70 | --- | ||
| Tf | ເວລາຕົກ | --- | 30 | --- | ||
| Ciss | Input Capacitance | VDS= 25V , VGS=0V , f=1MHz | --- | 4900 | --- | pF |
| ໂຄສ | Output Capacitance | --- | 410 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 315 | --- |
