WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
ພາບລວມຜະລິດຕະພັນ WINSOK MOSFET
ແຮງດັນຂອງ WSD60N10GDN56 MOSFET ແມ່ນ 100V, ປະຈຸບັນແມ່ນ 60A, ຄວາມຕ້ານທານແມ່ນ 8.5mΩ, ຊ່ອງທາງແມ່ນ N-channel, ແລະຊຸດແມ່ນ DFN5X6-8.
ພື້ນທີ່ຄໍາຮ້ອງສະຫມັກ WINSOK MOSFET
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ຊ່ອງຂໍ້ມູນຄໍາຮ້ອງສະຫມັກ MOSFET WINSOK MOSFET ກົງກັບຕົວເລກອຸປະກອນຍີ່ຫໍ້ອື່ນໆ
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.MOSFET9BAR3MOSFET. L,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS ເຊມິຄອນດັກເຕີ MOSFET PDC92X.
ຕົວກໍານົດການ MOSFET
| ສັນຍາລັກ | ພາລາມິເຕີ | ຄະແນນ | ໜ່ວຍ |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | ກະແສໄຟຟ້າຢ່າງຕໍ່ເນື່ອງ | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | ພະລັງງານ Avalanche, ກໍາມະຈອນດຽວ | 100 | mJ |
| PD@TC=25℃ | ການກະຈາຍພະລັງງານທັງໝົດ | 125 | ວ |
| TSTG | ຊ່ວງອຸນຫະພູມການເກັບຮັກສາ | -55 ຫາ 150 | ℃ |
| TJ | ໄລຍະອຸນຫະພູມ Junction ປະຕິບັດການ | -55 ຫາ 150 | ℃ |
| ສັນຍາລັກ | ພາລາມິເຕີ | ເງື່ອນໄຂ | ຕ່ຳສຸດ | ພິມ. | ສູງສຸດ. | ໜ່ວຍ |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ເປີດ) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(ທີ) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , ທJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS= ± 20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | ຄ່າຜ່ານປະຕູທັງໝົດ (10V) | VDS=50V , VGS=10V, ID=25A | --- | 49.9 | --- | nC |
| Qgs | ຄ່າບໍລິການ Gate-Source | --- | 6.5 | --- | ||
| Qgd | ຄ່າບໍລິການ Gate-Drain | --- | 12.4 | --- | ||
| Td(ເປີດ) | ເປີດເວລາຊັກຊ້າ | VDD=50V , VGS=10V ,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | ເວລາເພີ່ມຂຶ້ນ | --- | 5 | --- | ||
| Td(ປິດ) | ປິດ-ປິດ ເວລາຊັກຊ້າ | --- | 51.8 | --- | ||
| Tf | ເວລາຕົກ | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| ໂຄສ | Output Capacitance | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | ແຫຼ່ງທີ່ມາຢ່າງຕໍ່ເນື່ອງໃນປະຈຸບັນ | VG=VD=0V , Force Current | --- | --- | 60 | A |
| ISP | Pulsed Source Current | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=12A , ທJ=25℃ | --- | --- | 1.3 | V |
| trr | Reverse Recovery Time | IF=12A,dI/dt=100A/µs, TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | ຄ່າບໍລິການຟື້ນຟູຄືນ | --- | 106.1 | --- | nC |
