WSD40120DN56G N-channel 40V 120A DFN5X6-8 WINSOK MOSFET
ພາບລວມຜະລິດຕະພັນ WINSOK MOSFET
ແຮງດັນຂອງ WSD40120DN56G MOSFET ແມ່ນ 40V, ປະຈຸບັນແມ່ນ 120A, ຄວາມຕ້ານທານແມ່ນ 1.4mΩ, ຊ່ອງທາງແມ່ນ N-channel, ແລະຊຸດແມ່ນ DFN5X6-8.
ພື້ນທີ່ຄໍາຮ້ອງສະຫມັກ WINSOK MOSFET
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WINSOK MOSFET ກົງກັບຕົວເລກອຸປະກອນຍີ່ຫໍ້ອື່ນໆ
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ຕົວກໍານົດການ MOSFET
| ສັນຍາລັກ | ພາລາມິເຕີ | ຄະແນນ | ໜ່ວຍ |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source ແຮງດັນ | ±20 | V |
| ID@TC=25℃ | ກະແສໄຟຟ້າຢ່າງຕໍ່ເນື່ອງ, VGS@ 10V1 | 120 | A |
| ID@TC=100℃ | ກະແສໄຟຟ້າຢ່າງຕໍ່ເນື່ອງ, VGS@ 10V1 | 82 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | ພະລັງງານ Avalanche Pulse ດຽວ3 | 400 | mJ |
| IAS | Avalanche Current | 40 | A |
| PD@TC=25℃ | ການກະຈາຍພະລັງງານທັງໝົດ4 | 125 | W |
| TSTG | ຊ່ວງອຸນຫະພູມການເກັບຮັກສາ | -55 ຫາ 150 | ℃ |
| TJ | ໄລຍະອຸນຫະພູມ Junction ປະຕິບັດການ | -55 ຫາ 150 | ℃ |
| ສັນຍາລັກ | ພາລາມິເຕີ | ເງື່ອນໄຂ | ຕ່ຳສຸດ | ພິມ. | ສູງສຸດ. | ໜ່ວຍ |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSຄ່າສໍາປະສິດອຸນຫະພູມ | ອ້າງເຖິງ 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ເປີດ) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 1.4 | 1.8 | mΩ |
| RDS(ເປີດ) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.0 | 2.6 | mΩ |
| VGS(ທີ) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(ທີ) | VGS(ທີ)ຄ່າສໍາປະສິດອຸນຫະພູມ | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 32V , VGS=0V , ທJ=25℃ | --- | --- | 1 | uA |
| VDS= 32V , VGS=0V , ທJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=20A | --- | 53 | --- | S |
| Rg | ຄວາມຕ້ານທານຂອງປະຕູ | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | ຄ່າຜ່ານປະຕູທັງໝົດ (10V) | VDS= 15V , VGS=10V, ID=20A | --- | 45 | --- | nC |
| Qgs | ຄ່າບໍລິການ Gate-Source | --- | 12 | --- | ||
| Qgd | ຄ່າບໍລິການ Gate-Drain | --- | 18.5 | --- | ||
| Td(ເປີດ) | ເປີດເວລາຊັກຊ້າ | VDD= 15V , Vພົນເອກ=10V , RG=3.3Ω, ID=20A ,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | ເວລາເພີ່ມຂຶ້ນ | --- | 9 | --- | ||
| Td(ປິດ) | ປິດ-ປິດ ເວລາຊັກຊ້າ | --- | 58.5 | --- | ||
| Tf | ເວລາຕົກ | --- | 32 | --- | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 3972 | --- | pF |
| ໂຄສ | Output Capacitance | --- | 1119 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 82 | --- |
